Study of interfacial defects induced during the oxidation of ... by Silicon nanoparticles

Thu, 16 Jul 2009 14:23:37 -0700

Study of interfacial defects induced during the oxidation of ...

by Silicon nanoparticles @ Thu, 16 Jul 2009 14:23:37 -0700

In this work ultrathin strained silicon layers grown on relaxed SiGe substrates were oxidized under high thermal budget conditions in NO ambient at 800 degrees C. The results indicate that the density of interface traps depends on the ...

Original post: Study of interfacial defects induced during the oxidation of ... by at silicon oxidation - Google Blog Search

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