Hydrogenated Amorphous Silicon Layer Formation by Inductively ... by Silicon lattice

Thu, 16 Jul 2009 14:23:40 -0600

Hydrogenated Amorphous Silicon Layer Formation by Inductively ...

by Silicon lattice @ Thu, 16 Jul 2009 14:23:40 -0600

53 ms for an a-Si:H thickness of 15 nm and an annealing temperature of 450. C was measured for 525-mm-thick p-type crystalline silicon. (c-Si) substrates with a resistivity in the range of 1–20 cm by the quasi-steady-state ...

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